IRF3710SPBF - Power MOSFET

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International Rectifier

Part number	IRF3710SPBF
Manufacturer	International Rectifier
File Size	315.12 KB
Description	Power MOSFET
Datasheet	IRF3710SPBF Datasheet
Additional preview pages of the IRF3710SPBF datasheet.

silicon area.

. T for P-Channel Driver Gate Drive P. W. Period D= P. W. Period [VGS=10V ].
D. U. T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D. U. T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode Inductor Curent Forward Drop Ripple ≤ 5% [VDD] [ISD].
VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs 7 www. irf. com © 2013 International Rectifier Submit Datasheet Feedback November 1.

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Published: Oct 18, 2015 |