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IRF3710SPBF - Power MOSFET

General Description

silicon area.

Key Features

  • . T for P-Channel Driver Gate Drive P. W. Period D= P. W. Period [VGS=10V ].
  • D. U. T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D. U. T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode Inductor Curent Forward Drop Ripple ≤ 5% [VDD] [ISD].
  • VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs 7 www. irf. com © 2013 International Rectifier Submit Datasheet Feedback November 1.

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Full PDF Text Transcription (Reference)

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IRF3710SPbF IRF3710LPbF l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 23mΩ G ID = 57A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.