IRF540ZPBF Datasheet | International Rectifier

Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features bine to make this design an extremely efficient and reliable device for use in a wide variety of applications. IRF540ZPb F IRF540ZSPb F IRF540ZLPb F HEXFET® Power MOSFET VDSS = 100V RDS(on) = 26.5mΩ ID = 36A TO-220AB IRF540ZPb F D2Pak TO-262 IRF540ZSPb F IRF540ZLPb F Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ™ ID @ TC = 100°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current PD @TC = 25°C Power Dissipation Linear Derating Factor Gate-to-Source Voltage d EAS (Thermally limited) Single Pulse Avalanche Energy h EAS (Tested ) Single Pulse Avalanche Energy Tested Value Ù IAR Avalanche Current g EAR Repetitive Avalanche Energy TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds i Mounting Torque, 6-32 or M3 screw Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case i Case-to-Sink, Flat Greased Surface i Junction-to-Ambient j Junction-to-Ambient (PCB Mount) .irf. Max. 36 25 140 92 0.61 ± 20 83 120 See Fig.12a, 12b, 15, 16 -55 to + 175 300 (1.6mm from case ) y y 10 lbf in (1.1N...