IRF540ZPBF Overview
Key Specifications
Package: TO-220AB
Mount Type: Through Hole
Pins: 3
Height: 19.15 mm
Description
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.