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IRF540ZS - AUTOMOTIVE MOSFET

Download the IRF540ZS datasheet PDF. This datasheet also covers the IRF540Z variant, as both devices belong to the same automotive mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.

Key Features

  • Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G VDSS = 100V RDS(on) = 26.5mΩ S.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF540Z_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRF540ZS N-Channel MOSFET INCHANGE
IRF540Z N-Channel MOSFET INCHANGE
IRF540ZL N-Channel MOSFET INCHANGE
IRF540 Power MOSFET Vishay
IRF540 N-Channel MOSFET Transistor Inchange Semiconductor

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF540ZSPBF Power MOSFET
IRF540Z AUTOMOTIVE MOSFET
IRF540ZL AUTOMOTIVE MOSFET
IRF540ZLPBF Power MOSFET
IRF540ZPBF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 94758 AUTOMOTIVE MOSFET IRF540Z IRF540ZS IRF540ZL HEXFET® Power MOSFET D Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G VDSS = 100V RDS(on) = 26.5mΩ S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.