IRF540ZS Datasheet
IRF540ZS Datasheet (International Rectifier)
International Rectifier
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of th.
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Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
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VDSS = 100V RDS(on) = 26.5mΩ
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Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processin.
IRF540ZS Datasheet (Inchange Semiconductor)
Inchange Semiconductor
Isc N-Channel MOSFET Transistor IRF540ZS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations.
*With To-263(D2PAK) package
*Low input capacitance and gate charge
*Low gate input resistance
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*APPLICATIONS
*Switching applications
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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