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IRF5851PbF - Power MOSFET

Description

These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.

This benefit provides the designer with an extremely efficient device for use in battery and load management applications.

Features

  • n Diode Forward Voltage www. irf. com -ID , Drain Current (A) 100.

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Full PDF Text Transcription

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l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free l Halogen-Free PD-95341A IRF5851PbF HEXFET® Power MOSFET *  6   '  6 VDSS N-Ch 20V P-Ch -20V *   ' RDS(on) 0.090Ω 0.135Ω Description These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dual TSOP-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required.
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