IRF5852PbF
Description
These N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
This Dual TSOP-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required. With two die per package, the IRF5852 can provide the functionality of two SOT-23 packages in a smaller footprint. Its unique thermal design and RDS(on) reduction enables an increase in current-handling capability.
TSOP-6
B T! ! B! "
%9 $T # 9!
Top View
Absolute Maximum Ratings
VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C
VGS TJ, TSTG
Parameter Drain- Source Voltage
Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current
Power Dissipation
- Power Dissipation- Linear Derating Factor
Gate-to-Sou...
