Datasheet4U Logo Datasheet4U.com

IRF5852 - Power MOSFET

Description

These N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.

This benefit provides the designer with an extremely efficient device for use in battery and load management applications.

📥 Download Datasheet

Datasheet preview – IRF5852

📁 Similar Datasheet

  • IRF5803 - Power MOSFET (Infineon)
  • IRF5803PbF - Power MOSFET (Infineon)
  • IRF50N06 - N-Channel MOSFET (YZPST)
  • IRF510 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRF510 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • IRF510 - Power MOSFET (Vishay)
  • IRF510A - Advanced Power MOSFET (Fairchild Semiconductor)
  • IRF510S - Power MOSFET (Vishay)
  • IRF511 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRF511 - N-Channel Power MOSFET (Fairchild Semiconductor)
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
PD - 93999 IRF5852 HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS 20 V RDS(on) max (Ω) 0.090@VGS = 4.5V 0.120@VGS = 2.5V ID 2.7A 2.2A Description These N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dual TSOP-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required. With two die per package, the IRF5852 can provide the functionality of two SOT-23 packages in a smaller footprint.
Published: |