Datasheet4U Logo Datasheet4U.com

IRF5852 - Power MOSFET

General Description

These N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.

This benefit provides the designer with an extremely efficient device for use in battery and load management applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRF5803 Power MOSFET Infineon
IRF5803PbF Power MOSFET Infineon
IRF50N06 N-Channel MOSFET YZPST
IRF510 N-Channel MOSFET Transistor Inchange Semiconductor
IRF510 N-Channel Power MOSFET Fairchild Semiconductor

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF5852PbF Power MOSFET
IRF5850 Power MOSFET
IRF5851 Power MOSFET
IRF5851PbF Power MOSFET
IRF5800 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 93999 IRF5852 HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS 20 V RDS(on) max (Ω) 0.090@VGS = 4.5V 0.120@VGS = 2.5V ID 2.7A 2.2A Description These N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dual TSOP-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required. With two die per package, the IRF5852 can provide the functionality of two SOT-23 packages in a smaller footprint.