Description
The IRF6638PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile.
Features
- Pulse 0.1 0 1 10 100 VDS, Drain-to-Source Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
150 125
ID, Drain Current (A) Typical VGS(th) Gate threshold Voltage (V)
Fig11. Maximum Safe Operating Area
2.5
100 75 50 25 0 25 50 75 100 125 150 T C , Case Temperature (°C)
2.0
ID = 250µA 1.5
1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C )
Fig 12. Maximum Drain Current vs. Case Temperature
150
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13. Typical Threshold Voltag.
IRF6638TRPbF Datasheet
