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IRF6638TRPbF - DirectFET Power MOSFET

This page provides the datasheet information for the IRF6638TRPbF, a member of the IRF6638PbF DirectFET Power MOSFET family.

Datasheet Summary

Description

The IRF6638PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile.

Features

  • Pulse 0.1 0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 150 125 ID, Drain Current (A) Typical VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.5 100 75 50 25 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 250µA 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 150 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Typical Threshold Voltag.

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Full PDF Text Transcription

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PD - 97239 IRF6638PbF IRF6638TRPbF www.DataSheet4U.com DirectFET™ Power MOSFET ‚ RoHs Compliant  Typical values (unless otherwise specified) l Lead-Free (Qualified up to 260°C Reflow) VDSS VGS RDS(on) RDS(on) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters 30V max ±20V max 2.2mΩ@ 10V 3.0mΩ@ 4.5V l Low Conduction Losses Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l High Cdv/dt Immunity 30nC 11nC 3.2nC 27nC 18.4nC 1.8V l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  l MX Applicable DirectFET Outline and Substrate Outline (see p.
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