IRF6638TRPbF Overview
The IRF6638PbF bines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when...
IRF6638TRPbF Key Features
- Lead-Free (Qualified up to 260°C Reflow) VDSS VGS RDS(on) RDS(on)
- Application Specific MOSFETs
- Ideal for CPU Core DC-DC Converters 30V max ±20V max 2.2mΩ@ 10V 3.0mΩ@ 4.5V
- Low Conduction Losses Qg tot Qgd Qgs2 Qrr Qoss Vgs(th)
- High Cdv/dt Immunity 30nC 11nC 3.2nC 27nC 18.4nC 1.8V
- Low Profile (<0.7mm)
- Dual Sided Cooling patible
- patible with existing Surface Mount Techniques