IRF6668
IRF6668 is DirectFet Power MOSFET manufactured by International Rectifier.
Description
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25°C ID @ TC = 70°C IDM IS @ TC = 25°C IS @ TC = 70°C ISM Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V
Max.
Units
Pulsed Drain Current Continuous Source Current (Body Diode) Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) e f f e f f
80 ±20 55 44 170 81 52 170
- TC measured with thermocouple mounted to top (Drain) of part. Click on this section to link to the appropriate technical paper. Click on this section to link to the Direct FET Website.
- Repetitive rating; pulse width limited by max. junction temperature.
Notes:
.irf.
11/4/05
Electrical Characteristic @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS ∆BVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG (Internal) td(on) tr td(off) tf Ciss Coss Crss Coss Coss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source...
