Description
The IRF6662 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile.
Features
- rea
7.0 ID = 100µA ID = 250µA
8
ID, Drain Current (A)
6.0
ID = 1.0mA ID = 1.0A
6
5.0
4
4.0
2
3.0
0 25 50 75 100 125 150 T A , Ambient Temperature (°C)
2.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C )
Fig 12. Maximum Drain Current vs. Ambient Temperature
160
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13. Typical Threshold Voltage vs. Junction Temperature
ID TOP
140 120 100 80 60 40 20 0 25 50 75
1.6A 1.9A BOTTOM 4.9A
100
125
150
Starting T J , Junction Temperat.
IRF6662 Datasheet
