IRF6665
Features
- Latest MOSFET Silicon technology
- Key parameters optimized for Class-D audio amplifier applications
- Low RDS(on) for improved efficiency
- Low Qg for better THD and improved efficiency
- Low Qrr for better THD and lower EMI
- Low package stray inductance for reduced ringing and lower
- Can deliver up to 100W per channel into 8Ω with no heatsink
- - Dual sided cooling patible
- patible with existing surface mount technologies
- Ro HS pliant containing no lead or bromide
Key Parameters
RDS(on) typ. @ VGS = 10V 53 m:
Qg typ.
8.7 n C
RG(int) typ.
Direct FET ISOMETRIC
Applicable Direct FET Outline and Substrate Outline (see p. 6, 7 for details)
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal...
