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IRF6665PbF - Digital Audio MOSFET

General Description

This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications.

This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Key Features

  • Latest MOSFET Silicon technology.
  • Key parameters optimized for Class-D audio amplifier.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 97230A IRF6665PbF DIGITAL AUDIO MOSFET IRF6665TRPbF Features • Latest MOSFET Silicon technology • Key parameters optimized for Class-D audio amplifier applications • Low RDS(on) for improved efficiency • Low Qg for better THD and improved efficiency • Low Qrr for better THD and lower EMI • Low package stray inductance for reduced ringing and lower EMI • Can deliver up to 100W per channel into 8Ω with no heatsink Š • Dual sided cooling compatible · Compatible with existing surface mount technologies · RoHS compliant containing no lead or bromide ·Lead-Free (Qualified up to 260°C Reflow) Key Parameters VDS 100 RDS(on) typ. @ VGS = 10V Qg typ. RG(int) typ. 53 8.7 1.9 V m: nC SH DirectFET™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.