IRF6665PbF
Features
- Latest MOSFET Silicon technology
- Key parameters optimized for Class-D audio amplifier applications
- Low RDS(on) for improved efficiency
- Low Qg for better THD and improved efficiency
- Low Qrr for better THD and lower EMI
- Low package stray inductance for reduced ringing and lower
- Can deliver up to 100W per channel into 8Ω with no heatsink
- - Dual sided cooling patible
- patible with existing surface mount technologies
- Ro HS pliant containing no lead or bromide
- Lead-Free (Qualified up to 260°C Reflow)
Key Parameters
VDS 100
RDS(on) typ. @ VGS = 10V Qg typ.
RG(int) typ.
53 8.7 1.9
V m: n C
SH Direct FET ISOMETRIC
Applicable Direct FET Outline and Substrate Outline (see p. 6, 7 for details) SQ SX ST SH MQ MX MT
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode...
