Datasheet Details
| Part number | IRF6678 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 253.31 KB |
| Description | Power MOSFET |
| Datasheet | IRF6678_InternationalRectifier.pdf |
|
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Overview: PD - 96979B IRF6678 DirectFET™ Power MOSFET Low Profile (<0.7 mm) Dual Sided Cooling patible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 30V max ±20V max 1.7mΩ@ 10V 2.3mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 43nC 15nC 4.0nC 46nC 28nC 1.8V Optimized for for SyncFET Socket of Sync. Buck Converter Low Conduction and Switching Losses patible with Existing Surface Mount Techniques MX DirectFET™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.
| Part number | IRF6678 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 253.31 KB |
| Description | Power MOSFET |
| Datasheet | IRF6678_InternationalRectifier.pdf |
|
|
|
The IRF6678 bines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.
The DirectFET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
| Part Number | Description |
|---|---|
| IRF6678PbF | DirectFET Power MOSFET |
| IRF6678TRPbF | DirectFET Power MOSFET |
| IRF6674TRPBF | Power MOSFET |
| IRF6601 | DirectFET Power MOSFET |
| IRF6603 | HEXFETPower MOSFET |
| IRF6604 | Power MOSFET |
| IRF6607 | Power MOSFET |
| IRF6607TR1 | Power MOSFET |
| IRF6608 | lHEXFET Power MOSFET |
| IRF6609 | Power MOSFET |