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IRF6674TRPBF - Power MOSFET

Description

The IRF6674PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile.

Features

  • rce Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 14 12 5.0 Fig11. Maximum Safe Operating Area VGS(th) Gate threshold Voltage (V) 4.5 ID , Drain Current (A) 10 8 6 4 2 0 25 50 75 100 125 150 4.0 3.5 ID = 250μA ID = 100μA 3.0 2.5 2.0 -75 -50 -25 0 25 50 75 100 125 150 TJ , Ambient Temperature (°C) TJ , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Ambient Temperature 400 Fig 13. Typical Threshold Voltage vs. Junction Temperature ID 4.5A 9.3A BOTTOM 26.8A TO.

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Full PDF Text Transcription

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PD - 97133 IRF6674TRPbF DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) RoHS Compliant  l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  l VDSS Qg tot VGS Qgd 8.3nC RDS(on) 9.0mΩ@ 10V 60V max ±20V max 24nC Vgs(th) 4.0V MZ Applicable DirectFET Outline and Substrate Outline (see p.
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