Datasheet Details
| Part number | IRF6674TRPBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 272.90 KB |
| Description | Power MOSFET |
| Datasheet | IRF6674TRPBF-InternationalRectifier.pdf |
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Overview: PD - 97133 IRF6674TRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) RoHS pliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Dual Sided Cooling patible l patible with existing Surface Mount Techniques l VDSS Qg tot VGS Qgd 8.3nC RDS(on) 9.0mΩ@ 10V 60V max ±20V max 24nC Vgs(th) 4.0V MZ Applicable DirectFET Outline and Substrate Outline (see p.
| Part number | IRF6674TRPBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 272.90 KB |
| Description | Power MOSFET |
| Datasheet | IRF6674TRPBF-InternationalRectifier.pdf |
|
|
|
The IRF6674PbF bines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile.
The DirectFET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
| Part Number | Description |
|---|---|
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| IRF6678PbF | DirectFET Power MOSFET |
| IRF6678TRPbF | DirectFET Power MOSFET |
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| IRF6603 | HEXFETPower MOSFET |
| IRF6604 | Power MOSFET |
| IRF6607 | Power MOSFET |
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| IRF6608 | lHEXFET Power MOSFET |
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