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PD - 94366C
IRF6601
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Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Low Profile (<0.7 mm) Dual Sided Cooling Compatible Compatible with exisiting Surface Mount Techniques
DirectFETTM Power MOSFET VDSS
20V
RDS(on) max
3.8mΩ@VGS = 10V 5.0mΩ@VGS = 4.5V
ID
26A 21A
Description
DirectFET ISOMETRIC
The IRF6601 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques.
IRF6601 Datasheet
