IRF6601 Datasheet | International Rectifier

Description Direct FET™ ISOMETRIC The IRF6601 bines the latest HEXFET® Power MOSFET Silicon technology with the advanced Direct FETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The Direct FET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. The Direct FET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%. The IRF6601 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6601 has been optimized for parameters that are critical in synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6601 offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications. Absolute Maximum Ratings Parameter VDS ID @ TC = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C PD @TC = 25°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. 20 85 26 20 200 3.6 2.3 42 28 ±20 -55 to + 150 Units A W m W/°C V °C Thermal Resistance Symbol RθJA RθJA RθJA RθJC RθJ-PCB Parameter Junction-to-Ambient- Junction-to-Ambient- Junction-to-Ambient… Junction-to-Case† Junction-to-PCB mounted Typ. - - - - - - - - - - - - - - - Max. 35 12.5 20 3.0 1.0 Units °C/W .irf. 3/25/02 Static @ TJ = 25°C (unless otherwise specified) Parameter...