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IRF6601 - DirectFET Power MOSFET

General Description

The IRF6601 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile.

Key Features

  • consumer market. Qualification Standards can be found on IR’s Web site. IR WORLD.

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Full PDF Text Transcription for IRF6601 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IRF6601. For precise diagrams, and layout, please refer to the original PDF.

PD - 94366C IRF6601 l l l l l l l Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Low Profile (<0.7 mm) Dual S...

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ow Conduction Losses Low Switching Losses Low Profile (<0.7 mm) Dual Sided Cooling Compatible Compatible with exisiting Surface Mount Techniques DirectFETTM Power MOSFET VDSS 20V RDS(on) max 3.8mΩ@VGS = 10V 5.0mΩ@VGS = 4.5V ID 26A 21A Description DirectFET™ ISOMETRIC The IRF6601 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,

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