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IRF6607TR1 - Power MOSFET

Description

The IRF6607 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile.

Features

  • trolled by RG Driver same type as D. U. T. ISD controlled by Duty Factor "D" D. U. T. - Device Under Test VDD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD.
  • VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 16. Gate Charge Waveform www. irf. com 7 IRF6607 Power MOSFET Selection for Non-Isolated DC/DC Converters Control FET Special atte.

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Full PDF Text Transcription

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PD - 94574B HEXFET® l l IRF6607 Power MOSFET Application Specific MOSFETs Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques VDSS 30V 3.3mΩ@VGS = 10V 4.4mΩ@VGS = 4.5V RDS(on) max Qg(typ.) 50nC MT MX MT DirectFET™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.9,10 for details) SQ SX ST MQ Description The IRF6607 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile.
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