IRF6607TR1 Description
The IRF6607 bines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application...
IRF6607TR1 Key Features
- l IRF6607 Power MOSFET Application Specific MOSFETs Ideal for CPU Core DC-DC Converters
- Low Conduction Losses
- High Cdv/dt Immunity
- Low Profile (<0.7 mm)
- Dual Sided Cooling patible