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IRF6608 - lHEXFET Power MOSFET

General Description

The IRF6608 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

Key Features

  • ng Time Waveforms Id Vds Vgs 50KΩ 12V .2µF .3µF D. U. T. VGS 3mA + V - DS Vgs(th) IG ID Current Sampling Resistors Qgs1 Qgs2 Qgd Qgodr Fig 15. Gate Charge Test Circuit Fig 16. Gate Charge Waveform www. irf. com 5 IRF6608 D. U. T Driver Gate Drive + P. W. Period D= P. W. Period VGS=10V.
  • + Circuit Layout Considerations.
  • Low Stray Inductance.
  • Ground Plane.
  • Low Leakage Inductance Current Transformer.
  • D. U. T. ISD Waveform Reverse Recovery Current Bo.

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Full PDF Text Transcription for IRF6608 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IRF6608. For precise diagrams, and layout, please refer to the original PDF.

PD - 94727B IRF6608 l l l l l l l Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Low Profile (<0.7 mm) Dual S...

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ow Conduction Losses Low Switching Losses Low Profile (<0.7 mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques HEXFET® Power MOSFET VDSS 30V RDS(on) max 9.0mΩ@VGS = 10V 11mΩ@VGS = 4.5V Qg 16nC ST Applicable DirectFET Outline and Substrate Outline (see p.7, 8 for details) SQ SX ST MQ MX MT DirectFET™ ISOMETRIC Description The IRF6608 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

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