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IRF6604 - Power MOSFET

General Description

The IRF6604 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance charge product in a package that has the footprint of an SO-8 and only 0.7 mm profile.

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Full PDF Text Transcription for IRF6604 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IRF6604. For precise diagrams, and layout, please refer to the original PDF.

IRFP6D6- 9403645E l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile (<0.7 mm) l Dual Sided...

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ion Losses l Low Switching Losses l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques VDSS 30V HEXFET® Power MOSFET RDS(on) max Qg 11.5mΩ@VGS = 7.0V 17nC 13mΩ@VGS = 4.5V MQ DirectFET™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.9,10 for details) SQ SX ST MQ MX MT Description The IRF6604 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance charge product in a package that has the footprint of an SO-8 and only 0.7 mm profile.

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