Datasheet Details
| Part number | IRF6678PbF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 280.23 KB |
| Description | DirectFET Power MOSFET |
| Datasheet | IRF6678PbF_InternationalRectifier.pdf |
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Overview: RoHs pliant Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling patible l patible with existing Surface Mount Techniques l l DirectFET Power MOSFET Typical values (unless otherwise specified) IRF6678PbF IRF6678TRPbF .. PD - 97223 VDSS Qg tot VGS Qgd 15nC RDS(on) Qgs2 4.0nC RDS(on) Qoss 28nC 30V max ±20V max 1.7mΩ@ 10V 2.3mΩ@ 4.5V Qrr 46nC Vgs(th) 1.8V 43nC MX Applicable DirectFET Outline and Substrate Outline (see p.
| Part number | IRF6678PbF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 280.23 KB |
| Description | DirectFET Power MOSFET |
| Datasheet | IRF6678PbF_InternationalRectifier.pdf |
|
|
|
The IRF6678PbF bines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.
The DirectFET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques.
Application note AN-1035 is followed regarding the manufacturing methods and processes.
| Part Number | Description |
|---|---|
| IRF6678 | Power MOSFET |
| IRF6678TRPbF | DirectFET Power MOSFET |
| IRF6674TRPBF | Power MOSFET |
| IRF6601 | DirectFET Power MOSFET |
| IRF6603 | HEXFETPower MOSFET |
| IRF6604 | Power MOSFET |
| IRF6607 | Power MOSFET |
| IRF6607TR1 | Power MOSFET |
| IRF6608 | lHEXFET Power MOSFET |
| IRF6609 | Power MOSFET |