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IRF6712SPBF - N-Channel HEXFET Power MOSFET

Download the IRF6712SPBF datasheet PDF. This datasheet also covers the IRF6712STRPBF variant, as both devices belong to the same n-channel hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The IRF6712SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF6712STRPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IRF6712SPbF IRF6712STRPbF l RoHS Compliant and Halogen Free  l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ultra Low Package Inductance l Optimized for High Frequency Switching  l Ideal for CPU Core DC-DC Converters DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 25V max ±20V max 3.8m@ 10V 6.7m@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 12nC 4.0nC 1.7nC 14nC 10nC 1.9V l Optimized for both Sync.FET and some Control FET application l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques  l 100% Rg tested SQ DirectFET™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.