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IRF6712STRPBF - N-Channel HEXFET Power MOSFET

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The IRF6712SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

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IRF6712SPbF IRF6712STRPbF l RoHS Compliant and Halogen Free  l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ultra Low Package Inductance l Optimized for High Frequency Switching  l Ideal for CPU Core DC-DC Converters DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 25V max ±20V max 3.8m@ 10V 6.7m@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 12nC 4.0nC 1.7nC 14nC 10nC 1.9V l Optimized for both Sync.FET and some Control FET application l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques  l 100% Rg tested SQ DirectFET™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.
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