The IRF6712SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.
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IRF6712SPbF
IRF6712STRPbF
l RoHS Compliant and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters
DirectFET Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
25V max ±20V max 3.8m@ 10V 6.7m@ 4.5V
Qg tot Qgd Qgs2
Qrr
Qoss Vgs(th)
12nC 4.0nC 1.7nC 14nC 10nC 1.9V
l Optimized for both Sync.FET and some Control FET application
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques
l 100% Rg tested
SQ
DirectFET ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.
IRF6712STRPBF Datasheet
