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IRF6713STRPBF Datasheet DirectFET TM Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Download the IRF6713STRPBF datasheet PDF. This datasheet also includes the IRF6713SPBF variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IRF6713SPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

General Description

The IRF6713SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

Overview

www.DataSheet4U.com IRF6713SPbF IRF6713STRPbF Typical values (unless otherwise specified) PD - 96129A DirectFET™ Power MOSFET ‚ RDS(on) Qgs2 2.7nC l l l l l l l l l l RoHS Compliant Containing No Lead and Bromide  Low Profile (<0.7 mm) Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for CPU Core DC-DC Converters Optimized for both Sync.FET and some Control FET application Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques  100% Rg tested VDSS Qg tot VGS Qgd 6.3nC RDS(on) Qoss 14nC 25V max ±20V max 2.2mΩ@ 10V 3.5mΩ@ 4.5V Qrr 18nC Vgs(th) 1.9V 21nC SQ MT MP DirectFET ™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.

Key Features

  • n Diode Forward Voltage 100 Fig11. Maximum Safe Operating Area Typical VGS(th) Gate threshold Voltage (V) 3.0 80 ID, Drain Current (A) 2.5 60 2.0 ID = 50µA 40 1.5 ID = 100µA ID = 250µA ID = 1.0mA ID = 1.0A 20 1.0 0 25 50 75 100 125 150 T C , Case Temperature (°C) 0.5 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 150 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Typical Threshold Voltage vs. Junction Temperature ID.

More Datasheets from International Rectifier (now Infineon)

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