Datasheet Details
| Part number | IRF6711SPBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 325.56 KB |
| Description | Power MOSFET |
| Datasheet |
 IRF6711SPBF Datasheet
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General Description
The IRF6711STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.
Key Features
- ward Voltage 90 80 70 ID, Drain Current (A) Fig11. Maximum Safe Operating Area Typical VGS(th) Gate threshold Voltage (V) 3.0 2.5 60 50 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 25µA ID = 250µA ID = 1.0mA ID = 1.0A 1.5 1.0 0.5 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 300 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Typical Threshold Voltage vs. Junction Temperature ID TOP 0.91A 1.16A.