IRF6710S2 Description
The IRF6710S2TRPbF bines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application...
IRF6710S2 Key Features
- RoHS pliant Containing No Lead and Halogen Free DirectFET Power MOSFET Typical values (unless otherwise
- Low Profile (<0.7 mm)
- Dual Sided Cooling patible VDSS VGS RDS(on) RDS(on)
- Ultra Low Package Inductance
- Optimized for High Frequency Switching
- Ideal for CPU Core DC-DC Converters 25V max ±20V max 4.5mΩ@ 10V 9.0mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(t
- Optimized for Control FET Application