IRF6710S2 Datasheet | International Rectifier

- 97124D IRF6710S2TRPb F IRF6710S2TR1Pb F l Ro HS pliant Containing No Lead and Halogen Free  Direct FET™ Power MOSFET ‚ Typical values (unless otherwise specified) l Low Profile (<0.7 mm) l Dual Sided Cooling patible  VDSS RDS(on) RDS(on) l Ultra Low Package Inductance l Optimized for High Frequency Switching  l Ideal for CPU Core DC-DC Converters 25V max ±20V max 4.5mΩ@ 10V 9.0mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Optimized for Control FET Application l patible with existing Surface Mount Techniques  8.8n C 3.0n C 1.3n C 8.0n C 4.4n C 1.8V l 100% Rg tested Applicable Direct FET Outline and Substrate Outline  S1 Direct FET™ ISOMETRIC S1 S2 M2 M4 L4 L6 L8 Description The IRF6710S2TRPb F bines the latest HEXFET® Power MOSFET Silicon technology with the advanced Direct FETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The Direct FET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The Direct FET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6710S2TRPb F has low gate resistance and low charge along with ultra low package inductance providing significant reduction in switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6710S2TRPb F has been optimized for the control FET socket of synchronous buck operating from 12 volt bus...