Datasheet Details
| Part number | IRF6710S2TR1PbF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 294.83 KB |
| Description | Power MOSFET |
| Datasheet |
 IRF6710S2TR1PbF Datasheet
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General Description
The IRF6710S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.
Key Features
- d Voltage (V) 30 2.5 ID, Drain Current (A) 20 2.0 ID = 1.0A ID = 1.0mA ID = 250µA 10 1.5 ID = 25µA EAS, Single Pulse Avalanche Energy (mJ) 0 25 50 75 100 125 150 175 TC , Case Temperature (°C) Fig 12. Maximum Drain Current vs. Case Temperature 700 TJ = 175°C 600 500 400 TJ = 25°C 300 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 TJ , Temperature ( °C ) Fig 13. Typical Threshold Voltage vs. Junction Temperature 100 ID TOP 1.8A 80 3.8A BOTTOM 10A 60 40 Gfs, Forward Transconductance (S) 200 1.