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IRF6710S2TR1PbF - Power MOSFET

This page provides the datasheet information for the IRF6710S2TR1PbF, a member of the IRF6710S2TRPbF Power MOSFET family.

Datasheet Summary

Description

The IRF6710S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

Features

  • d Voltage (V) 30 2.5 ID, Drain Current (A) 20 2.0 ID = 1.0A ID = 1.0mA ID = 250µA 10 1.5 ID = 25µA EAS, Single Pulse Avalanche Energy (mJ) 0 25 50 75 100 125 150 175 TC , Case Temperature (°C) Fig 12. Maximum Drain Current vs. Case Temperature 700 TJ = 175°C 600 500 400 TJ = 25°C 300 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 TJ , Temperature ( °C ) Fig 13. Typical Threshold Voltage vs. Junction Temperature 100 ID TOP 1.8A 80 3.8A BOTTOM 10A 60 40 Gfs, Forward Transconductance (S) 200 1.

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Full PDF Text Transcription

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PD - 97124D IRF6710S2TRPbF IRF6710S2TR1PbF l RoHS Compliant Containing No Lead and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible   DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) l Ultra Low Package Inductance l Optimized for High Frequency Switching  l Ideal for CPU Core DC-DC Converters 25V max ±20V max 4.5mΩ@ 10V 9.0mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Optimized for Control FET Application l Compatible with existing Surface Mount Techniques  8.8nC 3.0nC 1.3nC 8.0nC 4.4nC 1.
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