IRF6713SPBF Datasheet | International Rectifier

.. IRF6713SPb F IRF6713STRPb F Typical values (unless otherwise specified) - 96129A Direct FET™ Power MOSFET ‚ RDS(on) Qgs2 2.7n C l l l l l l l l l l Ro HS pliant Containing No Lead and Bromide  Low Profile (<0.7 mm) Dual Sided Cooling patible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for CPU Core DC-DC Converters Optimized for both Sync.FET and some Control FET application Low Conduction and Switching Losses patible with existing Surface Mount Techniques  100% Rg tested VDSS Qg tot VGS Qgd 6.3n C RDS(on) Qoss 14n C 25V max ±20V max 2.2mΩ@ 10V 3.5mΩ@ 4.5V Qrr 18n C Vgs(th) 1.9V 21n C MT MP Direct FET ™ ISOMETRIC Applicable Direct FET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX Description The IRF6713SPb F bines the latest HEXFET® Power MOSFET Silicon technology with the advanced Direct FETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The Direct FET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The Direct FET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6713SPb F balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6713SPb F has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge to minimize...