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IRF7207PBF - Power MOSFET

General Description

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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Full PDF Text Transcription for IRF7207PBF (Reference)

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www.DataSheet4U.com PD - 95166 IRF7207PbF HEXFET® Power MOSFET Generation 5 Technology P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating ...

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fet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description l l S 1 2 3 4 8 7 A D D D D S S G VDSS = -20V RDS(on) = 0.06Ω 6 5 Top View Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

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