Datasheet4U Logo Datasheet4U.com

IRF7207PBF - Power MOSFET

Description

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

📥 Download Datasheet

Datasheet preview – IRF7207PBF

📁 Similar Datasheet

  • IRF720 - N-Channel Mosfet Transistor (Inchange Semiconductor)
  • IRF720 - N-Channel Power MOSFET (Samsung semiconductor)
  • IRF720 - N-Channel Power MOSFET (Intersil Corporation)
  • IRF720 - Power MOSFET (Vishay)
  • IRF720A - Advanced Power MOSFET (Fairchild Semiconductor)
  • IRF720B - 400V N-Channel MOSFET (Fairchild Semiconductor)
  • IRF720FI - N-Channel Mosfet Transistor (Inchange Semiconductor)
  • IRF720L - Power MOSFET (Vishay)
  • IRF720S - Power MOSFET (Vishay)
  • IRF721 - N-Channel Mosfet Transistor (Inchange Semiconductor)
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com PD - 95166 IRF7207PbF HEXFET® Power MOSFET Generation 5 Technology P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description l l S 1 2 3 4 8 7 A D D D D S S G VDSS = -20V RDS(on) = 0.06Ω 6 5 Top View Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Published: |