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PD - 94420
IRF7380
HEXFET® Power MOSFET
Applications High frequency DC-DC converters
VDSS 80V
RDS(on) max 73mΩ@VGS = 10V
ID 3.6A
Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current
S1 G1 S2 G2
1
8
D1 D1 D2 D2
2
7
3
6
4
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25°C ID @ TA = 100°C IDM PD @TA = 25°C dv/dt TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range
Max.
80 ± 20 3.
IRF7380 Datasheet
