d specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD.
Full PDF Text Transcription for IRF7380 (Reference)
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IRF7380. For precise diagrams, and layout, please refer to the original PDF.
PD - 94420 IRF7380 HEXFET® Power MOSFET Applications High frequency DC-DC converters VDSS 80V RDS(on) max 73mΩ@VGS = 10V ID 3.6A Benefits Low Gate to Drain Charge to Redu...
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) max 73mΩ@VGS = 10V ID 3.6A Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current S1 G1 S2 G2 1 8 D1 D1 D2 D2 2 7 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 100°C IDM PD @TA = 25°C dv/dt TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Operating Junct
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IRF7380 Datasheet
