Datasheet4U Logo Datasheet4U.com

IRF7380QPBF - Power MOSFET

Datasheet Summary

Description

Additional

Features

  • of These HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of.

📥 Download Datasheet

Datasheet preview – IRF7380QPBF

📁 Similar Datasheet

  • IRF730 - PowerMOS transistor (NXP)
  • IRF730 - N-Channel Power MOSFET (STMicroelectronics)
  • IRF730 - N-Channel Power MOSFET (Intersil Corporation)
  • IRF730 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • IRF730 - N-Channel MOSFET (NTE)
  • IRF730 - Power MOSFET (Vishay)
  • IRF730 - N-Channel Power MOSFET (nELL)
  • IRF730 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRF730 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Advanced Power Electronics)
  • IRF730A - Power MOSFET (Vishay)
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
PD - 96132B IRF7380QPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free HEXFET® Power MOSFET VDSS 80V RDS(on) max 73m:@VGS = 10V ID 2.2A S1 1 2 3 4 8 7 6 5 D1 D1 D2 D2 Description Additional features of These HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provides enhanced thermal characteristics making it ideal in a variety of power applications.
Published: |