of These HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of.
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PD - 96132B IRF7380QPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperat...
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MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free HEXFET® Power MOSFET VDSS 80V RDS(on) max 73m:@VGS = 10V ID 2.2A S1 1 2 3 4 8 7 6 5 D1 D1 D2 D2 Description Additional features of These HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provides enhanced thermal characteristics making it ideal in a variety of power applications.
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IRF7380QPBF Datasheet
