IRF7389 - HEXFET Power MOSFET

International Rectifier (now Infineon)

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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IRF7389 hexfet power mosfet by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRF7389
Manufacturer	International Rectifier (now Infineon)
File Size	214.47 KB
Description	HEXFET Power MOSFET
Datasheet	IRF7389 Datasheet

Full PDF Text Transcription for IRF7389 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IRF7389. For precise diagrams, and layout, please refer to the original PDF.

PD - 91645A IRF7389 HEXFET® Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Avalanche Rated S1 G1 S2 ...

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omplimentary Half Bridge Surface Mount Fully Avalanche Rated S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 D1 D2 D2 N-Ch VDSS 30V P-Ch -30V 2 7 3 6 4 5 P-CHANNEL MOSFET RDS(on) 0.029Ω 0.058Ω Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

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