IRF7456
PD- 93840B
SMPS MOSFET
HEXFET® Power MOSFET l
Applications High Frequency DC-DC Converters with Synchronous Rectification
VDSS
20V
RDS(on) max
0.0065Ω
16A
Benefits Ultra-Low RDS(on) at 4.5V VGS l Low Charge and Low Gate Impedance to Reduce Switching Losses l Fully Characterized Avalanche Voltage and Current l
A A D D D D
T o p V ie w
SO-8
Absolute Maximum Ratings
Symbol
VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG
Parameter
Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation- Maximum Power Dissipation- Linear Derating Factor Junction and Storage Temperature Range
Max.
20 ± 12 16 13 130 2.5 1.6 0.02 -55 to + 150
Units
V V A W W W/°C °C
Thermal Resistance
Parameter
RθJA Maximum Junction-to-Ambient-
Max.
Units
°C/W
Typical SMPS Topologies l
Tele 48V Input Converters with...
