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PD- 93840B
SMPS MOSFET
IRF7456
HEXFET® Power MOSFET
l
Applications High Frequency DC-DC Converters with Synchronous Rectification
VDSS
20V
RDS(on) max
0.0065Ω
ID
16A
Benefits Ultra-Low RDS(on) at 4.5V VGS l Low Charge and Low Gate Impedance to Reduce Switching Losses l Fully Characterized Avalanche Voltage and Current
l
S S S G
1
8
A A D D D D
2
7
3
6
4
5
T o p V ie w
SO-8
Absolute Maximum Ratings
Symbol
VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG
Parameter
Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range
Max.
20 ± 12 16 13 130 2.