IRF7458 Description
30 ± 30 14 11 110 2.5 1.6 0.02 -55 to + 150 Units V V A W W mW/°C °C Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient Typ. 20 50 Units °C/W Notes through are on page 8 .irf. 1 3/25/01 IRF7458 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
IRF7458 Key Features
- High Frequency Isolated DC-DC Converters with Synchronous Rectification for Tele and Industrial Use
- High Frequency Buck Converters for puter Processor Power Benefits
- IRF7458 HEXFET® Power MOSFET VDSS 30V RDS(on) max 8.0mΩ ID 14A Ultra-Low Gate Impedance Very Low RDS(on) F