IRF7488 Key Features
- High frequency DC-DC converters HEXFET® Power MOSFET VDSS 80V RDS(on) max 29mW@VGS=10V Qg 38nC Benefits
- Low Gate-to-Drain Charge to Reduce Switching Losses
- Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) S S S
- Fully Characterized Avalanche Voltage G and Current 18 27 36 45 Top View AA D D D D SO-8