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IRF7493 - HEXFET Power MOSFET

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PD - 94654B IRF7493 HEXFET® Power MOSFET l Applications High frequency DC-DC converters VDSS 80V RDS(on) max 15m:@VGS=10V Qg (typ.) 35nC Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current S S S G 1 8 A A D D D D 2 7 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C PD @TC = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 80 ± 20 9.3 7.4 74 2.5 1.6 0.
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