IRF7492 Description
PD - 94498 IRF7492 HEXFET® Power MOSFET Applications l High frequency DC-DC converters VDSS 200V RDS(on) max 79mΩ@VGS = 10V ID 3.7A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. 20 50 Units °C/W Notes through are on page 8 .irf. 1 06/27/02 IRF7492 Static @ TJ = 25°C (unless otherwise specified) Parameter...
IRF7492 Key Features
- High frequency DC-DC converters VDSS 200V RDS(on) max 79mΩ@VGS = 10V ID 3.7A Benefits
- Low Gate to Drain Charge to Reduce Switching Losses
- Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)
- Fully Characterized Avalanche Voltage and Current S S S G 1 8 A A D D D D 2 7 3 6 4 5 T o p V ie w