pacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS. Starting TJ = 25°C, L = 14mH
RG = 25Ω, IAS = 4.4A.
Pulse width ≤ 400µs; duty cycle ≤ 2%. ISD ≤ 2.2A, di/dt ≤ 210A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD.
Full PDF Text Transcription for IRF7492 (Reference)
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IRF7492. For precise diagrams, and layout, please refer to the original PDF.
PD - 94498 IRF7492 HEXFET® Power MOSFET Applications l High frequency DC-DC converters VDSS 200V RDS(on) max 79mΩ@VGS = 10V ID 3.7A Benefits l Low Gate to Drain Charge to...
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(on) max 79mΩ@VGS = 10V ID 3.7A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.
More Datasheets from International Rectifier (now Infineon)
IRF7492 Datasheet
