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IRF7492 - HEXFET Power MOSFET

Datasheet Summary

Features

  • pacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. ‚ Starting TJ = 25°C, L = 14mH RG = 25Ω, IAS = 4.4A.
  • Pulse width ≤ 400µs; duty cycle ≤ 2%. † ISD ≤ 2.2A, di/dt ≤ 210A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD.

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PD - 94498 IRF7492 HEXFET® Power MOSFET Applications l High frequency DC-DC converters VDSS 200V RDS(on) max 79mΩ@VGS = 10V ID 3.7A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.
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