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PD - 95289
IRF7493PbF
HEXFET® Power MOSFET
Applications High frequency DC-DC converters l Lead-Free
l
VDSS
80V
RDS(on) max
15m @VGS=10V
:
Qg (typ.)
35nC
Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
S S S G
1
8 7
A A D D D D
2
3
6
4
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C PD @TC = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
80 ± 20 9.3 7.4 74 2.5 1.6 0.
IRF7493PBF Datasheet
