xed capacitance that gives the same charging time ISD ≤ 2.2A, di/dt ≤ 210A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C. as Coss while VDS is rising from 0 to 80% VDSS. Starting TJ = 25°C, L = 14mH
RG = 25Ω, IAS = 4.4A.
Pulse width ≤ 400µs; duty cycle ≤ 2%. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. IR WORLD.
Full PDF Text Transcription for IRF7492PBF (Reference)
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PD - 95287A IRF7492PbF HEXFET® Power MOSFET Applications l High frequency DC-DC converters l Lead-Free VDSS 200V RDS(on) max 79mW@VGS = 10V ID 3.7A Benefits l Low Gate to...
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ee VDSS 200V RDS(on) max 79mW@VGS = 10V ID 3.7A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current S S S G 1 2 3 4 8 7 A A D D D D 6 5 Top View SO-8 www.DataSheet4U.
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IRF7492PBF Datasheet
