DD ≤ V(BR)DSS, TJ ≤ 150°C. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. IR WORLD.
Full PDF Text Transcription for IRF7495PBF (Reference)
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IRF7495PBF. For precise diagrams, and layout, please refer to the original PDF.
Applications l High frequency DC-DC converters l Lead-Free PD - 95288 IRF7495PbF VDSS 100V HEXFET® Power MOSFET RDS(on) max ID :22m @VGS = 10V 7.3A Benefits l Low Gate to...
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ower MOSFET RDS(on) max ID :22m @VGS = 10V 7.3A Benefits l Low Gate to Drain Charge to Reduce Switching Losses S l Fully Characterized Capacitance Including S Effective COSS to Simplify Design, (See App.
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IRF7495PBF Datasheet
