Datasheet Details
| Part number | IRF7607PBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 140.53 KB |
| Description | Power MOSFET |
| Download | IRF7607PBF Download (PDF) |
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| Part number | IRF7607PBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 140.53 KB |
| Description | Power MOSFET |
| Download | IRF7607PBF Download (PDF) |
|
|
|
New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The new Micro8™ package has half the footprint area of the standard SO-8.
PD - 95698 IRF7607PbF l Trench Technology l Ultra Low On-Resistance l N-Channel MOSFET l Very Small SOIC Package l Low Profile (<1.
| Part Number | Description |
|---|---|
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