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IRF7705GPBF - Power MOSFET

Description

HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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PD- 96142A IRF7705GPbF l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile ( < 1.2mm) Available in Tape & Reel Lead-Free Halogen-Free HEXFET® Power MOSFET VDSS -30V RDS(on) max (mW) 18 @VGS = -10V 30 @VGS = -4.5V ID -8.0A -6.0A Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the de9 ! " # Ã2Ã9 !Ã2ÃT "Ã2ÃT #Ã2ÃB ' & % $ 'Ã2Ã9 &Ã2ÃT %Ã2ÃT $Ã2Ã9 B T signer with an extremely efficient and reliable device for use in battery and load management. The TSSOP-8 package has 45% less footprint area than the standard SO-8.
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