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IRF7807VPBF - Power MOSFET

General Description

This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge.

The reduction of conduction and switching losses makes it ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors.

Overview

www.DataSheet4U.com PD-95210 IRF7807VPbF • • • • N Channel Application Specific MOSFET Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses 100% RG Tested Lead-Free HEXFET® Power MOSFET S S S 1 2.

Key Features

  • E.