IRF7807VPBF Datasheet | International Rectifier

Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduction of conduction and switching losses makes it ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors. A pair of IRF7807V devices provides the best cost/ performance solution for system voltages, such as 3.3V and 5V. SO-8 T o p V ie w DEVICE CHARACTERISTICS… RDS(on) QG QSW QOSS IRF7807V 17 mΩ 9.5 n C 3.4 n C 12 n C Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source TA = 25°C TA = 70°C TA = 25°C TA = 70°C (VGS ≥ 4.5V) Symbol VDS VGS ID IDM PD TJ , TSTG IS ISM IRF7807V 30 ±20 8.3 6.6 66 2.5 1.6 -55 to 150 2.5 66 Units ™ Power Dissipation eÃÃÃÃÃÃà Pulsed Drain Current Pulsed Source Current W °C A Junction & Storage Temperature Range Continuous Source Current (Body Diode) ™ Thermal Resistance Parameter Maximum Junction-to-Ambient Maximum Junction-to-Lead h eh Symbol RθJA RθJL Typ - - - - - - Max 50 20 Units °C/W 11/3/04 IRF7807VPb F Electrical Characteristics Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Drain-Source Leakage Current Gate-Source Leakage Current- Total Gate Charge- Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate-to-Drain Charge Switch Charge (Qgs2 + Qgd) Output Charge- Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Symbol BVDSS RDS(on) VGS(th) IDSS IGSS QG QGS1 QGS2 QGD QSW QOSS RG td(on) tr td(off)...