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IRF7807ZPBF - Power MOSFET

Features

  • ached and the time the drain current rises to Idmax at which time the drain voltage begins to change. Minimizing Qgs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the output capacitance of the MOSFET during every switching cycle. Figure A shows how Qoss is formed by the parallel combination of the voltage dependant (nonlinear) capacitance’s Cds and Cdg when multiplied by the power supply input buss voltage. 8 Synchronous FET The power los.

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PD - 95211B Applications l Control FET for Notebook Processor Power l Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Networking and Telecommunication Systems Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l Lead-Free IRF7807ZPbF HEXFET® Power MOSFET VDSS RDS(on) max Qg(typ.) :30V 13.8m @VGS = 10V 7.
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