IRF7807ZPBF Description
30 ± 20 11 8.7 88 2.5 1.6 0.02 -55 to + 150 Units V A W W/°C °C Typ. 20 50 Units °C/W Notes through are on page 10 .irf. 1 6/29/06 IRF7807ZPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min.
IRF7807ZPBF Key Features
- Control FET for Notebook Processor Power
- Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Networking and Telemunication Systems Be
- Very Low RDS(on) at 4.5V VGS
- Ultra-Low Gate Impedance
- Fully Characterized Avalanche Voltage and Current
- 100% Tested for RG
- Lead-Free IRF7807ZPbF HEXFET® Power MOSFET VDSS RDS(on) max Qg(typ.) :30V 13.8m @VGS = 10V 7.2nC S1 S2