IRF7834PbF
- 95292
Applications l Synchronous MOSFET for Notebook
Processor Power l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in Networking Systems l Lead-Free
Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS ID @ TA = 25°C
Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C
Continuous Drain Current, VGS @ 10V c Pulsed Drain Current f Power Dissipation f Power Dissipation
TJ TSTG
Linear Derating Factor Operating Junction and
Storage Temperature Range
IRF7834Pb F
HEXFET® Power MOSFET
VDSS
RDS(on) max
Qg (typ.)
:30V 4.5m @VGS = 10V 29n C
S1 S2 S3 G4
AA 8D 7D 6D 5D
Top View
SO-8
Max. 30 ± 20 19 16 160 2.5 1.6
0.02 -55 to + 150
Units V
W/°C °C
Thermal Resistance
Parameter g RθJL Junction-to-Drain Lead fg RθJA Junction-to-Ambient
Typ.
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