IRF7835UPBF
- 96080A
IRF7835UPb F
HEXFET® Power MOSFET
Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low Qrr l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating l Lead-Free
..
VDSS
30V
4.5m:@VGS = 10V
1 2 3 4 8 7
RDS(on) max
Qg
22n C
A A D D D D
6 5
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
Max.
30 ± 20 19 15 150 2.5 1.6 0.02 -55 to + 155
Units
V c
A W W/°C °C
Thermal Resistance
RθJL RθJA g Junction-to-Ambient fg
Junction-to-Drain...
