Datasheet4U Logo Datasheet4U.com

IRF8513PBF - Power MOSFET

General Description

The IRF8513PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package.

The IRF8513PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses.

Key Features

  • Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 11. Maximum Safe Operating Area Fig 12. Maximum Safe Operating Area 4 www. irf. com www. DataSheet4U. com Typical Characteristics Q1 - Control FET 2.0 ID = 8.0A VGS = 10V RDS(on) , Drain-to-Source On Resistance (Normalized) IRF8513PbF Q2 - Synchronous FET ID = 11A VGS = 10V 1.5 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) 1.5 1.0 1.0 0.5 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Junction Temperature (°C).

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRF8010 N-Channel MOSFET INCHANGE
IRF8010L N-Channel MOSFET INCHANGE
IRF8010S N-Channel MOSFET INCHANGE
IRF820 N-Channel Power MOSFET ART CHIP
IRF820 N-Channel MOSFET Transistor Inchange Semiconductor

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF8010 HEXFET Power MOSFET
IRF8010L SMPS MOSFET
IRF8010LPBF HEXFET Power MOSFET
IRF8010PBF HEXFET Power MOSFET
IRF8010S SMPS MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 96196 www.DataSheet4U.com IRF8513PbF HEXFET® Power MOSFET Applications l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoles and Set-Top Box Benefits l Low Gate Charge and Low RDS(on) l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating l 100% Tested for RG l Lead-Free (Qualified to 260°C Reflow) l RoHS Compliant (Halogen Free) V DSS 30V R DS(on) max Q1 15.5m @VGS = 10V Q2 12.7m @VGS = 10V : : ID 8.0A 11A B      9 T ÃÃ9! T ÃÃ9! T ÃÃ9! SO-8 T!  T!  B!  Description The IRF8513PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package.