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IRF8852PBF - HEXFET Power MOSFET

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Description

HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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Features

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Full PDF Text Transcription

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PD - 96246 IRF8852PbF l l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (< 1.1mm) Available in Tape & Reel Lead-Free HEXFET® Power MOSFET VDSS 25V RDS(on) max 11.3m @VGS = 10V 15.4m @VGS = 4.5V : : Id 7.8A 6.2A Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the ! " # Ã2Ã9 !Ã2ÃT "Ã2ÃT #Ã2ÃB ' & % $ 'Ã2Ã9! &Ã2ÃT! %Ã2ÃT! $Ã2ÃB! designer with an extremely efficient and reliable device for battery and load management. The TSSOP-8 package has 45% less footprint area than the standard SO-8.
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