Datasheet Summary
- 96246
IRF8852PbF l l l l l l
Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (< 1.1mm) Available in Tape & Reel Lead-Free
HEXFET® Power MOSFET
VDSS 25V
RDS(on) max 11.3m @VGS = 10V 15.4m @VGS = 4.5V
: :
Id 7.8A 6.2A
Description
HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the ruggedized device design, that International Rectifier is well known for, provides the
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