HEXFET® MOSFET technology is the key to IR Hirel advanced line of power MOSFET transistors.
Key Features
Repetitive Avalanche Ratings.
Dynamic dv/dt Rating.
Hermetically Sealed.
Simple Drive Requirements.
ESD Rating: Class 1C per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Symbol
Parameter
ID1 @ VGS = -10V, TC = 25°C Continuous Drain Current
ID2 @ VGS = -10V, TC = 100°C Continuous Drain Current
IDM @TC = 25°C
Pulsed Drain Current
PD @TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
VGS EAS IAR EAR dv/dt
Gate-to-Source Voltage Single Pulse Aval.
Full PDF Text Transcription for IRF9130 (Reference)
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IRF9130. For precise diagrams, and layout, please refer to the original PDF.
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE (TO-204AA) Product Summary Part Number BVDSS IRF9130 -100V RDS(on) ID -11A PD- 90549E IRF9130 JANT...
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mber BVDSS IRF9130 -100V RDS(on) ID -11A PD- 90549E IRF9130 JANTX2N6804 JANTXV2N68064 100V, P-CHANNEL REF: MIL-PRF-19500/562 Description HEXFET® MOSFET technology is the key to IR Hirel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high trans conductance; superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching and temperature stability of the electri
IRF9130 Datasheet
