IRF9410 Datasheet | International Rectifier

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. S O -8 Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted) Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current… TA = 25°C TA = 70°C VDS VGS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG Maximum 30 ± 20 7.0 5.8 37 2.8 2.5 1.6 70 4.2 0.25 5.0 -55 to + 150 Units Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25°C Maximum Power Dissipation … TA = 70°C Single Pulse Avalanche Energy ‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt - Junction and Storage Temperature Range W m J A m J V/ ns °C Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient … Symbol RθJA Limit Units °C/W 9/15/97 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer...