Click to expand full text
PD - 9.1562A
PRELIMINARY
l l l l l l
IRF9410
HEXFET® Power MOSFET
8 7
Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated
S S S G
1 2
A A D D D D
VDSS = 30V RDS(on) = 0.030Ω
3
6
4
5
T o p V ie w
Recommended upgrade: IRF7403 or IRF7413 Lower profile/smaller equivalent: IRF7603
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
IRF9410 Datasheet
