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IRF9410 - Power MOSFET

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Overview

PD - 9.1562A PRELIMINARY l l l l l l IRF9410 HEXFET® Power MOSFET 8 7 Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated S S S G 1 2 A A D D D D VDSS = 30V RDS(on) = 0.

Key Features

  • uro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR.