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IRF9410PBF - Power MOSFET

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Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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www.DataSheet4U.com PD - 95260 IRF9410PbF l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET S S S G 1 8 A A D D D D 2 7 VDSS = 30V RDS(on) = 0.030Ω 3 6 4 5 Top View Recommended upgrade: IRF7403 or IRF7413 Lower profile/smaller equivalent: IRF7603 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
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