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IRF9952 - Power MOSFET

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Overview

PD - 91561B IRF9952 l Generation V Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Very Low Gate Charge and Switching Losses l Fully Avalanche Rated HEXFET® Power MOSFET N-CHANNEL MOSFET S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 P-CHANNEL MOSFET Top View N-Ch P-Ch VDSS 30V -30V RDS(on) 0.10Ω 0.