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IRF9952 - Power MOSFET

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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PD - 91561B IRF9952 l Generation V Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Very Low Gate Charge and Switching Losses l Fully Avalanche Rated HEXFET® Power MOSFET N-CHANNEL MOSFET S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 P-CHANNEL MOSFET Top View N-Ch P-Ch VDSS 30V -30V RDS(on) 0.10Ω 0.25Ω Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
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